MASMBJ11A
vs
SMBJ11A-E3/5B
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Active
Ihs Manufacturer
MICROCHIP TECHNOLOGY INC
VISHAY SEMICONDUCTORS
Package Description
SMBJ, 2 PIN
R-PDSO-C2
Reach Compliance Code
compliant
unknown
Factory Lead Time
40 Weeks
Breakdown Voltage-Max
13.5 V
13.5 V
Breakdown Voltage-Min
12.2 V
12.2 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-214AA
DO-214AA
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
JESD-609 Code
e0
e3
Moisture Sensitivity Level
1
1
Non-rep Peak Rev Power Dis-Max
600 W
600 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-65 °C
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
1.38 W
5 W
Reference Standard
IEC-61000-4-2, 4-4, 4-5; MIL-19500
UL RECOGNIZED
Rep Pk Reverse Voltage-Max
11 V
11 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Finish
Tin/Lead (Sn/Pb)
Matte Tin (Sn)
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Base Number Matches
2
2
Pbfree Code
Part Package Code
DO-214AA
Pin Count
2
ECCN Code
EAR99
HTS Code
8541.10.00.50
Additional Feature
EXCELLENT CLAMPING CAPABILITY, UL RECOGNIZED
Breakdown Voltage-Nom
12.85 V
Clamping Voltage-Max
18.2 V
Forward Voltage-Max (VF)
3.5 V
Peak Reflow Temperature (Cel)
260
Qualification Status
Not Qualified
Reverse Current-Max
5 µA
Reverse Test Voltage
11 V
Time@Peak Reflow Temperature-Max (s)
30
Compare MASMBJ11A with alternatives
Compare SMBJ11A-E3/5B with alternatives