MASMBJ11A/TR
vs
SMBJ11A-T3
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Transferred
Obsolete
Ihs Manufacturer
MICROSEMI CORP
SANGDEST MICROELECTRONICS (NANJING) CO LTD
Package Description
R-PDSO-C2
R-PDSO-C2
Reach Compliance Code
not_compliant
unknown
ECCN Code
EAR99
HTS Code
8541.10.00.50
Additional Feature
TR, 7 INCH; 750
Breakdown Voltage-Max
13.5 V
13.48 V
Breakdown Voltage-Min
12.2 V
12.2 V
Breakdown Voltage-Nom
12.85 V
Clamping Voltage-Max
18.2 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-214AA
DO-214AA
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
JESD-609 Code
e0
Moisture Sensitivity Level
1
1
Non-rep Peak Rev Power Dis-Max
600 W
600 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
Operating Temperature-Min
-65 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
1.38 W
Qualification Status
Not Qualified
Not Qualified
Rep Pk Reverse Voltage-Max
11 V
11 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Finish
TIN LEAD
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Base Number Matches
1
2
Reference Standard
UL RECOGNIZED
Compare MASMBJ11A/TR with alternatives
Compare SMBJ11A-T3 with alternatives