MASMBGP6KE56E3TR vs MASMBJP6KE51E3TR feature comparison

MASMBGP6KE56E3TR Microsemi Corporation

Buy Now Datasheet

MASMBJP6KE51E3TR Microsemi Corporation

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Transferred Transferred
Ihs Manufacturer MICROSEMI CORP MICROSEMI CORP
Part Package Code DO-215AA DO-214AA
Package Description R-PDSO-G2 R-PDSO-C2
Pin Count 2 2
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature TR, 7 INCH: 750 TR, 7 INCH: 750
Breakdown Voltage-Max 61.6 V 56.1 V
Breakdown Voltage-Min 50.4 V 45.9 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-215AA DO-214AA
JESD-30 Code R-PDSO-G2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1.38 W 1.38 W
Rep Pk Reverse Voltage-Max 45.4 V 41.3 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form GULL WING C BEND
Terminal Position DUAL DUAL
Base Number Matches 1 1

Compare MASMBGP6KE56E3TR with alternatives

Compare MASMBJP6KE51E3TR with alternatives