MASMBGP6KE18CE3 vs MQSMBJ14CE3TR feature comparison

MASMBGP6KE18CE3 Microsemi Corporation

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MQSMBJ14CE3TR Microsemi Corporation

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Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer MICROSEMI CORP MICROSEMI CORP
Package Description R-PDSO-G2 ROHS COMPLIANT, PLASTIC PACKAGE-2
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 19.8 V 19.1 V
Breakdown Voltage-Min 16.2 V 15.6 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-215AA DO-214AA
JESD-30 Code R-PDSO-G2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 1.38 W 1.38 W
Rep Pk Reverse Voltage-Max 14.5 V 14 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form GULL WING C BEND
Terminal Position DUAL DUAL
Base Number Matches 2 1
Rohs Code Yes
Part Package Code DO-214AA
Pin Count 2
Additional Feature TR, 7 INCH: 750
Breakdown Voltage-Nom 17.35 V
Clamping Voltage-Max 25.8 V
JESD-609 Code e3
Moisture Sensitivity Level 1
Qualification Status Not Qualified
Terminal Finish MATTE TIN

Compare MASMBGP6KE18CE3 with alternatives

Compare MQSMBJ14CE3TR with alternatives