MASMBGP6KE110 vs SMBJ130A-GT3 feature comparison

MASMBGP6KE110 Microsemi Corporation

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SMBJ130A-GT3 Sangdest Microelectronics (Nanjing) Co Ltd

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Pbfree Code No
Rohs Code No Yes
Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer MICROSEMI CORP SANGDEST MICROELECTRONICS (NANJING) CO LTD
Part Package Code DO-215AA
Package Description R-PDSO-G2 R-PDSO-C2
Pin Count 2
Reach Compliance Code compliant unknown
ECCN Code EAR99
HTS Code 8541.10.00.50
Breakdown Voltage-Max 121 V 165.5 V
Breakdown Voltage-Min 99 V 144 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-215AA DO-214AA
JESD-30 Code R-PDSO-G2 R-PDSO-C2
JESD-609 Code e0
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1.38 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 89.2 V 130 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish TIN LEAD
Terminal Form GULL WING C BEND
Terminal Position DUAL DUAL
Base Number Matches 16 1
Reference Standard UL RECOGNIZED

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Compare SMBJ130A-GT3 with alternatives