MASMBG51E3/TR13 vs MSPSMBG51E3 feature comparison

MASMBG51E3/TR13 Microsemi Corporation

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MSPSMBG51E3 Microsemi Corporation

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Rohs Code Yes Yes
Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer MICROSEMI CORP MICROSEMI CORP
Package Description R-PDSO-G2 R-PDSO-G2
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 69.3 V 69.3 V
Breakdown Voltage-Min 56.7 V 56.7 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-215AA DO-215AA
JESD-30 Code R-PDSO-G2 R-PDSO-G2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1.38 W 1.38 W
Rep Pk Reverse Voltage-Max 51 V 51 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN MATTE TIN
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Base Number Matches 1 1
Part Package Code DO-215AA
Pin Count 2
Breakdown Voltage-Nom 63 V
Clamping Voltage-Max 91.1 V
Qualification Status Not Qualified
Reference Standard MIL-19500

Compare MASMBG51E3/TR13 with alternatives

Compare MSPSMBG51E3 with alternatives