MAPLAD36KP54CAE3
vs
MPLAD36KP51CA
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Active
Ihs Manufacturer
MICROCHIP TECHNOLOGY INC
MICROCHIP TECHNOLOGY INC
Reach Compliance Code
compliant
compliant
Factory Lead Time
40 Weeks
40 Weeks
Additional Feature
HIGH RELIABILITY
HIGH RELIABILITY
Breakdown Voltage-Max
66.3 V
62.7 V
Breakdown Voltage-Min
60 V
56.7 V
Breakdown Voltage-Nom
63.15 V
59.7 V
Case Connection
CATHODE
Clamping Voltage-Max
87.1 V
82.4 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
S-PSSO-G1
S-PSSO-G1
Non-rep Peak Rev Power Dis-Max
36000 W
36000 W
Number of Elements
1
1
Number of Terminals
1
1
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
SQUARE
SQUARE
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity
BIDIRECTIONAL
BIDIRECTIONAL
Power Dissipation-Max
2.5 W
2.5 W
Reference Standard
AEC-Q101; IEC-61000-4-2, 4-4, 4-5; MIL-19500
AEC-Q101; IEC-61000-4-2, 4-4, 4-5; MIL-19500
Rep Pk Reverse Voltage-Max
54 V
51 V
Reverse Current-Max
10 µA
10 µA
Reverse Test Voltage
54 V
51 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Form
GULL WING
GULL WING
Terminal Position
SINGLE
SINGLE
Base Number Matches
1
4
JESD-609 Code
e0
Moisture Sensitivity Level
1
Terminal Finish
TIN LEAD
Compare MAPLAD36KP54CAE3 with alternatives
Compare MPLAD36KP51CA with alternatives