MAPLAD36KP110A
vs
MXLPLAD36KP110AE3
feature comparison
Pbfree Code |
No
|
|
Rohs Code |
No
|
Yes
|
Part Life Cycle Code |
Transferred
|
Active
|
Ihs Manufacturer |
MICROSEMI CORP
|
MICROCHIP TECHNOLOGY INC
|
Reach Compliance Code |
compliant
|
compliant
|
ECCN Code |
EAR99
|
|
HTS Code |
8541.10.00.50
|
|
Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
Base Number Matches |
2
|
2
|
Additional Feature |
|
HIGH RELIABILITY
|
Breakdown Voltage-Max |
|
135 V
|
Breakdown Voltage-Min |
|
122 V
|
Breakdown Voltage-Nom |
|
128.5 V
|
Case Connection |
|
CATHODE
|
Clamping Voltage-Max |
|
177 V
|
Configuration |
|
SINGLE
|
Diode Element Material |
|
SILICON
|
JESD-30 Code |
|
S-PSSO-G1
|
Non-rep Peak Rev Power Dis-Max |
|
36000 W
|
Number of Elements |
|
1
|
Number of Terminals |
|
1
|
Operating Temperature-Max |
|
150 °C
|
Operating Temperature-Min |
|
-55 °C
|
Package Body Material |
|
PLASTIC/EPOXY
|
Package Shape |
|
SQUARE
|
Package Style |
|
SMALL OUTLINE
|
Polarity |
|
UNIDIRECTIONAL
|
Power Dissipation-Max |
|
2.5 W
|
Reference Standard |
|
AEC-Q101; IEC-61000-4-2, 4-4, 4-5; MIL-19500
|
Rep Pk Reverse Voltage-Max |
|
110 V
|
Reverse Current-Max |
|
10 µA
|
Reverse Test Voltage |
|
110 V
|
Surface Mount |
|
YES
|
Technology |
|
AVALANCHE
|
Terminal Form |
|
GULL WING
|
Terminal Position |
|
SINGLE
|
|
|
|
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