MAPLAD30KP130CA vs MXPLAD30KP130CAE3TR feature comparison

MAPLAD30KP130CA Microchip Technology Inc

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MXPLAD30KP130CAE3TR Microsemi Corporation

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Rohs Code No Yes
Part Life Cycle Code Active Active
Ihs Manufacturer MICROCHIP TECHNOLOGY INC MICROSEMI CORP
Reach Compliance Code compliant unknown
Factory Lead Time 40 Weeks
Additional Feature HIGH RELIABILITY HIGH RELIABILITY
Breakdown Voltage-Max 159 V 159 V
Breakdown Voltage-Min 144 V 144 V
Breakdown Voltage-Nom 151.5 V
Clamping Voltage-Max 209 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code S-PSSO-G1 R-PSSO-G1
JESD-609 Code e0 e3
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 30000 W 30000 W
Number of Elements 1 1
Number of Terminals 1 1
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape SQUARE RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 2.5 W 2.5 W
Qualification Status Not Qualified Not Qualified
Reference Standard IEC-61000-4-2, 4-4, 4-5; MIL-19500
Rep Pk Reverse Voltage-Max 130 V 130 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish TIN LEAD MATTE TIN
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Base Number Matches 4 2
Pbfree Code Yes
Package Description R-PSSO-G1
Pin Count 1
Case Connection CATHODE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Compare MAPLAD30KP130CA with alternatives

Compare MXPLAD30KP130CAE3TR with alternatives