MAP6KE130A vs P6KE130B feature comparison

MAP6KE130A Microsemi Corporation

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P6KE130B Diodes Incorporated

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Pbfree Code No
Rohs Code No
Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer MICROSEMI CORP DIODES INC
Package Description PLASTIC, T-18, 2 PIN O-LALF-W2
Pin Count 2
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 137 V
Breakdown Voltage-Min 124 V 117 V
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-PALF-W2 O-LALF-W2
JESD-609 Code e0
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 175 °C
Operating Temperature-Min -65 °C -55 °C
Package Body Material PLASTIC/EPOXY GLASS
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 5 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 111 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Finish TIN LEAD
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 2 3
Additional Feature TEMPERATURE COEFFICIENT IS DERIVED FROM MINIMUM BREAK-DOWN VOLTAGE
Clamping Voltage-Max 187 V
Reverse Current-Max 5 µA

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