MAP6KE100ATRE3 vs P6KE100C-TB feature comparison

MAP6KE100ATRE3 Microsemi Corporation

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P6KE100C-TB Won-Top Electronics Co Ltd

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Pbfree Code Yes No
Rohs Code Yes No
Part Life Cycle Code Transferred Active
Ihs Manufacturer MICROSEMI CORP WON-TOP ELECTRONICS CO LTD
Package Description O-PALF-W2 PLASTIC PACKAGE-2
Pin Count 2 2
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature HIGH RELIABILITY
Breakdown Voltage-Max 105 V 110 V
Breakdown Voltage-Min 95 V 90 V
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-PALF-W2 O-PALF-W2
JESD-609 Code e3 e0
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 175 °C
Operating Temperature-Min -65 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 1.47 W 5 W
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 85.5 V 81 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN TIN LEAD
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 1 1
Part Package Code DO-15
Breakdown Voltage-Nom 100 V
Clamping Voltage-Max 144 V
JEDEC-95 Code DO-15

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