MAP6KCE33CAE3 vs MAP6KCE33CAE3TR feature comparison

MAP6KCE33CAE3 Microsemi Corporation

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MAP6KCE33CAE3TR Microsemi Corporation

Buy Now Datasheet
Pbfree Code Yes Yes
Rohs Code Yes Yes
Part Life Cycle Code Transferred Transferred
Ihs Manufacturer MICROSEMI CORP MICROSEMI CORP
Package Description O-PALF-W2 O-PALF-W2
Pin Count 2 2
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 34.7 V 34.7 V
Breakdown Voltage-Min 31.4 V 31.4 V
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-PALF-W2 O-PALF-W2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 5 W 5 W
Qualification Status Not Qualified Not Qualified
Reference Standard MIL-19500 MIL-19500
Rep Pk Reverse Voltage-Max 28.2 V 28.2 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN MATTE TIN
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 1 1

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