MA4ST406CK-T
vs
BB804TRL13
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
M/A-COM TECHNOLOGY SOLUTIONS INC
NXP SEMICONDUCTORS
Package Description
R-PDSO-G3
R-PDSO-G3
Pin Count
3
Manufacturer Package Code
CASE 287
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.80
8541.10.00.80
Breakdown Voltage-Min
22 V
Configuration
COMMON CATHODE, 2 ELEMENTS
COMMON CATHODE, 2 ELEMENTS
Diode Cap Tolerance
10%
Diode Capacitance Ratio-Min
8
1.65
Diode Capacitance-Nom
27 pF
44.75 pF
Diode Element Material
SILICON
SILICON
Diode Type
VARIABLE CAPACITANCE DIODE
VARIABLE CAPACITANCE DIODE
Frequency Band
HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
JESD-30 Code
R-PDSO-G3
R-PDSO-G3
Number of Elements
2
2
Number of Terminals
3
3
Operating Temperature-Max
125 °C
Operating Temperature-Min
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Power Dissipation-Max
0.25 W
Qualification Status
Not Qualified
Not Qualified
Quality Factor-Min
150
Rep Pk Reverse Voltage-Max
22 V
Surface Mount
YES
YES
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Variable Capacitance Diode Classification
HYPERABRUPT
ABRUPT
Base Number Matches
2
2
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