MA1N6279ATR
vs
1N6279-A
feature comparison
| Rohs Code |
No
|
No
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
MICROSEMI CORP
|
DIODES INC
|
| Package Description |
O-PALF-W2
|
O-XALF-W2
|
| Pin Count |
2
|
|
| Manufacturer Package Code |
CASE 1
|
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.50
|
8541.10.00.50
|
| Breakdown Voltage-Max |
23.1 V
|
24.2 V
|
| Breakdown Voltage-Min |
20.9 V
|
19.8 V
|
| Breakdown Voltage-Nom |
22 V
|
22 V
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Clamping Voltage-Max |
30.6 V
|
31.9 V
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
| JESD-30 Code |
O-PALF-W2
|
O-XALF-W2
|
| JESD-609 Code |
e0
|
e0
|
| Moisture Sensitivity Level |
1
|
|
| Non-rep Peak Rev Power Dis-Max |
1500 W
|
1500 W
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
150 °C
|
175 °C
|
| Operating Temperature-Min |
-65 °C
|
-65 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
UNSPECIFIED
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Polarity |
UNIDIRECTIONAL
|
UNIDIRECTIONAL
|
| Power Dissipation-Max |
1.52 W
|
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Rep Pk Reverse Voltage-Max |
18.8 V
|
18.8 V
|
| Surface Mount |
NO
|
NO
|
| Technology |
AVALANCHE
|
AVALANCHE
|
| Terminal Finish |
TIN LEAD
|
Tin/Lead (Sn/Pb)
|
| Terminal Form |
WIRE
|
WIRE
|
| Terminal Position |
AXIAL
|
AXIAL
|
| Base Number Matches |
1
|
4
|
| Reverse Current-Max |
|
5 µA
|
|
|
|
Compare MA1N6279ATR with alternatives
Compare 1N6279-A with alternatives