M95160-RBN3G/W vs M95160-RBN3 feature comparison

M95160-RBN3G/W STMicroelectronics

Buy Now Datasheet

M95160-RBN3 STMicroelectronics

Buy Now Datasheet
Rohs Code Yes No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer STMICROELECTRONICS STMICROELECTRONICS
Reach Compliance Code compliant not_compliant
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.51 8542.32.00.51
Data Retention Time-Min 40 40
Endurance 1000000 Write/Erase Cycles 1000000 Write/Erase Cycles
JESD-30 Code R-PDIP-T8 R-PDIP-T8
JESD-609 Code e3 e0
Memory Density 16384 bit 16384 bit
Memory IC Type EEPROM EEPROM
Memory Width 8 8
Number of Terminals 8 8
Number of Words 2048 words 2048 words
Number of Words Code 2000 2000
Operating Temperature-Max 125 °C 125 °C
Operating Temperature-Min -40 °C -40 °C
Organization 2KX8 2KX8
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code DIP DIP
Package Equivalence Code DIP8,.3 DIP8,.3
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE IN-LINE
Parallel/Serial SERIAL SERIAL
Qualification Status Not Qualified Not Qualified
Serial Bus Type SPI SPI
Standby Current-Max 5e-7 A 5e-7 A
Supply Current-Max 0.001 mA 0.001 mA
Surface Mount NO NO
Technology CMOS CMOS
Temperature Grade AUTOMOTIVE AUTOMOTIVE
Terminal Finish Matte Tin (Sn) Tin/Lead (Sn60Pb40)
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Pitch 2.54 mm 2.54 mm
Terminal Position DUAL DUAL
Write Protection HARDWARE/SOFTWARE HARDWARE/SOFTWARE
Base Number Matches 1 8

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