M95160-RBN3G/G vs M95160-RBN3G/W feature comparison

M95160-RBN3G/G STMicroelectronics

Buy Now Datasheet

M95160-RBN3G/W STMicroelectronics

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer STMICROELECTRONICS STMICROELECTRONICS
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.51 8542.32.00.51
Data Retention Time-Min 40 40
Endurance 1000000 Write/Erase Cycles 1000000 Write/Erase Cycles
JESD-30 Code R-PDIP-T8 R-PDIP-T8
JESD-609 Code e3 e3
Memory Density 16384 bit 16384 bit
Memory IC Type EEPROM EEPROM
Memory Width 8 8
Number of Terminals 8 8
Number of Words 2048 words 2048 words
Number of Words Code 2000 2000
Operating Temperature-Max 125 °C 125 °C
Operating Temperature-Min -40 °C -40 °C
Organization 2KX8 2KX8
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code DIP DIP
Package Equivalence Code DIP8,.3 DIP8,.3
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE IN-LINE
Parallel/Serial SERIAL SERIAL
Qualification Status Not Qualified Not Qualified
Serial Bus Type SPI SPI
Standby Current-Max 5e-7 A 5e-7 A
Supply Current-Max 0.001 mA 0.001 mA
Surface Mount NO NO
Technology CMOS CMOS
Temperature Grade AUTOMOTIVE AUTOMOTIVE
Terminal Finish Matte Tin (Sn) Matte Tin (Sn)
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Pitch 2.54 mm 2.54 mm
Terminal Position DUAL DUAL
Write Protection HARDWARE/SOFTWARE HARDWARE/SOFTWARE
Base Number Matches 1 1

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