M68AF127BM55B6 vs K6T1008C2E-DL55 feature comparison

M68AF127BM55B6 STMicroelectronics

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K6T1008C2E-DL55 Samsung Semiconductor

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Rohs Code Yes No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer STMICROELECTRONICS SAMSUNG SEMICONDUCTOR INC
Part Package Code DIP DIP
Package Description 0.600 INCH, PLASTIC, DIP-32 DIP, DIP32,.6
Pin Count 32 32
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.41 8542.32.00.41
Access Time-Max 55 ns 55 ns
I/O Type COMMON COMMON
JESD-30 Code R-PDIP-T32 R-PDIP-T32
JESD-609 Code e3
Length 42.035 mm 41.91 mm
Memory Density 1048576 bit 1048576 bit
Memory IC Type STANDARD SRAM STANDARD SRAM
Memory Width 8 8
Number of Functions 1 1
Number of Terminals 32 32
Number of Words 131072 words 131072 words
Number of Words Code 128000 128000
Operating Mode ASYNCHRONOUS ASYNCHRONOUS
Operating Temperature-Max 85 °C 70 °C
Operating Temperature-Min -40 °C
Organization 128KX8 128KX8
Output Characteristics 3-STATE 3-STATE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code DIP DIP
Package Equivalence Code DIP32,.6 DIP32,.6
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE IN-LINE
Parallel/Serial PARALLEL PARALLEL
Qualification Status Not Qualified Not Qualified
Seated Height-Max 4.83 mm 5.08 mm
Standby Current-Max 0.0000045 A
Standby Voltage-Min 2 V 2 V
Supply Current-Max 0.02 mA 0.05 mA
Supply Voltage-Max (Vsup) 5.5 V 5.5 V
Supply Voltage-Min (Vsup) 4.5 V 4.5 V
Supply Voltage-Nom (Vsup) 5 V 5 V
Surface Mount NO NO
Technology CMOS CMOS
Temperature Grade INDUSTRIAL COMMERCIAL
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Pitch 2.54 mm 2.54 mm
Terminal Position DUAL DUAL
Width 15.24 mm 15.24 mm
Base Number Matches 2 2
Moisture Sensitivity Level 1

Compare M68AF127BM55B6 with alternatives

Compare K6T1008C2E-DL55 with alternatives