M5K4164NS-20
vs
5962-01-170-8185
feature comparison
Rohs Code |
No
|
No
|
Part Life Cycle Code |
Obsolete
|
Obsolete
|
Ihs Manufacturer |
MITSUBISHI ELECTRIC CORP
|
INTEL CORP
|
Package Description |
DIP, DIP16,.3
|
DIP, DIP16,.3
|
Reach Compliance Code |
unknown
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8542.32.00.02
|
8542.32.00.02
|
Access Time-Max |
200 ns
|
200 ns
|
I/O Type |
SEPARATE
|
SEPARATE
|
JESD-30 Code |
R-XDIP-T16
|
R-XDIP-T16
|
JESD-609 Code |
e0
|
|
Memory Density |
65536 bit
|
65536 bit
|
Memory IC Type |
PAGE MODE DRAM
|
PAGE MODE DRAM
|
Memory Width |
1
|
1
|
Number of Terminals |
16
|
16
|
Number of Words |
65536 words
|
65536 words
|
Number of Words Code |
64000
|
64000
|
Operating Temperature-Max |
70 °C
|
70 °C
|
Operating Temperature-Min |
|
|
Organization |
64KX1
|
64KX1
|
Output Characteristics |
3-STATE
|
3-STATE
|
Package Body Material |
CERAMIC
|
CERAMIC
|
Package Code |
DIP
|
DIP
|
Package Equivalence Code |
DIP16,.3
|
DIP16,.3
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
IN-LINE
|
IN-LINE
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Refresh Cycles |
128
|
128
|
Supply Voltage-Nom (Vsup) |
5 V
|
5 V
|
Surface Mount |
NO
|
NO
|
Technology |
MOS
|
MOS
|
Temperature Grade |
COMMERCIAL
|
COMMERCIAL
|
Terminal Finish |
Tin/Lead (Sn/Pb)
|
|
Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
Terminal Pitch |
2.54 mm
|
2.54 mm
|
Terminal Position |
DUAL
|
DUAL
|
Base Number Matches |
1
|
1
|
|
|
|
Compare M5K4164NS-20 with alternatives
Compare 5962-01-170-8185 with alternatives