M59DR032EB10ZB1F
vs
M59DR032EB12ZF1
feature comparison
Rohs Code |
Yes
|
|
Part Life Cycle Code |
Transferred
|
Transferred
|
Ihs Manufacturer |
STMICROELECTRONICS
|
STMICROELECTRONICS
|
Part Package Code |
BGA
|
BGA
|
Package Description |
7 X 12 MM, 0.75 MM PITCH, TFBGA-48
|
7 X 7 MM, 0.75 MM PITCH, TFBGA-48
|
Pin Count |
48
|
48
|
Reach Compliance Code |
compliant
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8542.32.00.51
|
8542.32.00.51
|
Access Time-Max |
100 ns
|
120 ns
|
Boot Block |
BOTTOM
|
BOTTOM
|
JESD-30 Code |
R-PBGA-B48
|
S-PBGA-B48
|
JESD-609 Code |
e1
|
|
Length |
12 mm
|
7 mm
|
Memory Density |
33554432 bit
|
33554432 bit
|
Memory IC Type |
FLASH
|
FLASH
|
Memory Width |
16
|
16
|
Number of Functions |
1
|
1
|
Number of Terminals |
48
|
48
|
Number of Words |
2097152 words
|
2097152 words
|
Number of Words Code |
2000000
|
2000000
|
Operating Mode |
ASYNCHRONOUS
|
ASYNCHRONOUS
|
Operating Temperature-Max |
70 °C
|
70 °C
|
Operating Temperature-Min |
|
|
Organization |
2MX16
|
2MX16
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Code |
LFBGA
|
TFBGA
|
Package Shape |
RECTANGULAR
|
SQUARE
|
Package Style |
GRID ARRAY, LOW PROFILE, FINE PITCH
|
GRID ARRAY, THIN PROFILE, FINE PITCH
|
Parallel/Serial |
PARALLEL
|
PARALLEL
|
Programming Voltage |
1.8 V
|
1.8 V
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Seated Height-Max |
1.35 mm
|
1.2 mm
|
Supply Voltage-Max (Vsup) |
2.2 V
|
2.2 V
|
Supply Voltage-Min (Vsup) |
1.65 V
|
1.65 V
|
Supply Voltage-Nom (Vsup) |
1.8 V
|
1.8 V
|
Surface Mount |
YES
|
YES
|
Technology |
CMOS
|
CMOS
|
Temperature Grade |
COMMERCIAL
|
COMMERCIAL
|
Terminal Finish |
TIN SILVER COPPER
|
|
Terminal Form |
BALL
|
BALL
|
Terminal Pitch |
0.75 mm
|
0.75 mm
|
Terminal Position |
BOTTOM
|
BOTTOM
|
Type |
NOR TYPE
|
NOR TYPE
|
Width |
7 mm
|
7 mm
|
Base Number Matches |
1
|
4
|
|
|
|
Compare M59DR032EB10ZB1F with alternatives
Compare M59DR032EB12ZF1 with alternatives