M58BW016DB100ZA6
vs
M58BW016DB100ZA3FT
feature comparison
Part Life Cycle Code |
Obsolete
|
Obsolete
|
Ihs Manufacturer |
NUMONYX
|
NUMONYX
|
Part Package Code |
BGA
|
BGA
|
Package Description |
10 X 12 MM, 1 MM PITCH, LBGA-80
|
10 X 12 MM, 1 MM PITCH, LBGA-80
|
Pin Count |
80
|
80
|
Reach Compliance Code |
unknown
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8542.32.00.51
|
8542.32.00.51
|
Access Time-Max |
100 ns
|
100 ns
|
Additional Feature |
BOTTOM BOOT BLOCK
|
SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK
|
Boot Block |
BOTTOM
|
BOTTOM
|
JESD-30 Code |
R-PBGA-B80
|
R-PBGA-B80
|
Length |
12 mm
|
12 mm
|
Memory Density |
16777216 bit
|
16777216 bit
|
Memory IC Type |
FLASH
|
FLASH
|
Memory Width |
32
|
32
|
Number of Functions |
1
|
1
|
Number of Terminals |
80
|
80
|
Number of Words |
524288 words
|
524288 words
|
Number of Words Code |
512000
|
512000
|
Operating Mode |
ASYNCHRONOUS
|
ASYNCHRONOUS
|
Operating Temperature-Max |
85 °C
|
125 °C
|
Operating Temperature-Min |
-40 °C
|
-40 °C
|
Organization |
512KX32
|
512KX32
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Code |
LBGA
|
LBGA
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
GRID ARRAY, LOW PROFILE
|
GRID ARRAY, LOW PROFILE
|
Parallel/Serial |
PARALLEL
|
PARALLEL
|
Programming Voltage |
3 V
|
3 V
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Seated Height-Max |
1.7 mm
|
1.7 mm
|
Supply Voltage-Max (Vsup) |
3.6 V
|
3.6 V
|
Supply Voltage-Min (Vsup) |
2.7 V
|
2.7 V
|
Supply Voltage-Nom (Vsup) |
3 V
|
3 V
|
Surface Mount |
YES
|
YES
|
Technology |
CMOS
|
CMOS
|
Temperature Grade |
INDUSTRIAL
|
AUTOMOTIVE
|
Terminal Form |
BALL
|
BALL
|
Terminal Pitch |
1 mm
|
1 mm
|
Terminal Position |
BOTTOM
|
BOTTOM
|
Type |
NOR TYPE
|
NOR TYPE
|
Width |
10 mm
|
10 mm
|
Base Number Matches |
4
|
1
|
|
|
|
Compare M58BW016DB100ZA6 with alternatives
Compare M58BW016DB100ZA3FT with alternatives