M470T3354CZ0-CE7 vs MT8HSF3264HDY-667XX feature comparison

M470T3354CZ0-CE7 Samsung Semiconductor

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MT8HSF3264HDY-667XX Micron Technology Inc

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC MICRON TECHNOLOGY INC
Part Package Code SODIMM MODULE
Package Description DIMM, DIMM200,24 LEAD FREE, SODIMM-200
Pin Count 200 200
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.36 8542.32.00.36
Access Mode SINGLE BANK PAGE BURST DUAL BANK PAGE BURST
Access Time-Max 0.4 ns
Additional Feature AUTO/SELF REFRESH AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 400 MHz
I/O Type COMMON
JESD-30 Code R-XZMA-N200 R-XDMA-N200
Memory Density 2147483648 bit 2147483648 bit
Memory IC Type DDR DRAM MODULE DDR DRAM MODULE
Memory Width 64 64
Moisture Sensitivity Level 2
Number of Functions 1 1
Number of Ports 1 1
Number of Terminals 200 200
Number of Words 33554432 words 33554432 words
Number of Words Code 32000000 32000000
Operating Mode SYNCHRONOUS SYNCHRONOUS
Operating Temperature-Max 95 °C 85 °C
Operating Temperature-Min
Organization 32MX64 32MX64
Output Characteristics 3-STATE
Package Body Material UNSPECIFIED UNSPECIFIED
Package Code DIMM DIMM
Package Equivalence Code DIMM200,24
Package Shape RECTANGULAR RECTANGULAR
Package Style MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY
Qualification Status Not Qualified Not Qualified
Refresh Cycles 8192
Self Refresh YES YES
Supply Current-Max 1.36 mA
Supply Voltage-Max (Vsup) 1.9 V 1.9 V
Supply Voltage-Min (Vsup) 1.7 V 1.7 V
Supply Voltage-Nom (Vsup) 1.8 V 1.8 V
Surface Mount NO NO
Technology CMOS CMOS
Temperature Grade OTHER OTHER
Terminal Form NO LEAD NO LEAD
Terminal Pitch 0.6 mm
Terminal Position ZIG-ZAG DUAL
Base Number Matches 1 1
Pbfree Code Yes
JESD-609 Code e1
Terminal Finish TIN SILVER COPPER

Compare M470T3354CZ0-CE7 with alternatives

Compare MT8HSF3264HDY-667XX with alternatives