M470T2953EZ3-LCC vs WV3EG265M64EFSU265D4-S feature comparison

M470T2953EZ3-LCC Samsung Semiconductor

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WV3EG265M64EFSU265D4-S Microsemi Corporation

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Rohs Code Yes No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC MICROSEMI CORP
Part Package Code SODIMM MODULE
Package Description DIMM, DIMM200,24 DIMM,
Pin Count 200 200
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.36 8542.32.00.36
Access Mode DUAL BANK PAGE BURST DUAL BANK PAGE BURST
Access Time-Max 0.6 ns 0.75 ns
Additional Feature AUTO/SELF REFRESH AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 200 MHz
I/O Type COMMON
JESD-30 Code R-XZMA-N200 R-XDMA-N200
Memory Density 8589934592 bit 8589934592 bit
Memory IC Type DDR DRAM MODULE DDR DRAM MODULE
Memory Width 64 64
Number of Functions 1 1
Number of Ports 1 1
Number of Terminals 200 200
Number of Words 134217728 words 134217728 words
Number of Words Code 128000000 128000000
Operating Mode SYNCHRONOUS SYNCHRONOUS
Operating Temperature-Max 95 °C 70 °C
Operating Temperature-Min
Organization 128MX64 128MX64
Output Characteristics 3-STATE
Package Body Material UNSPECIFIED UNSPECIFIED
Package Code DIMM DIMM
Package Equivalence Code DIMM200,24
Package Shape RECTANGULAR RECTANGULAR
Package Style MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Cel) NOT SPECIFIED NOT SPECIFIED
Qualification Status Not Qualified Not Qualified
Refresh Cycles 8192
Self Refresh YES YES
Standby Current-Max 0.128 A
Supply Current-Max 1.72 mA
Supply Voltage-Max (Vsup) 1.9 V 2.7 V
Supply Voltage-Min (Vsup) 1.7 V 2.3 V
Supply Voltage-Nom (Vsup) 1.8 V 2.5 V
Surface Mount NO NO
Technology CMOS CMOS
Temperature Grade OTHER COMMERCIAL
Terminal Form NO LEAD NO LEAD
Terminal Pitch 0.6 mm
Terminal Position ZIG-ZAG DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Base Number Matches 2 2
Pbfree Code No

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