M470L3324BT0-LA2 vs M470T3354CZ0-LE7 feature comparison

M470L3324BT0-LA2 Samsung Semiconductor

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M470T3354CZ0-LE7 Samsung Semiconductor

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Pbfree Code No
Rohs Code No Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC SAMSUNG SEMICONDUCTOR INC
Part Package Code SODIMM SODIMM
Package Description DIMM, DIMM200,24 DIMM, DIMM200,24
Pin Count 200 200
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.36 8542.32.00.36
Access Mode SINGLE BANK PAGE BURST SINGLE BANK PAGE BURST
Access Time-Max 0.75 ns 0.4 ns
Additional Feature AUTO/SELF REFRESH AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 133 MHz 400 MHz
I/O Type COMMON COMMON
JESD-30 Code R-XZMA-N200 R-XZMA-N200
JESD-609 Code e0
Memory Density 2147483648 bit 2147483648 bit
Memory IC Type DDR DRAM MODULE DDR DRAM MODULE
Memory Width 64 64
Number of Functions 1 1
Number of Ports 1 1
Number of Terminals 200 200
Number of Words 33554432 words 33554432 words
Number of Words Code 32000000 32000000
Operating Mode SYNCHRONOUS SYNCHRONOUS
Operating Temperature-Max 70 °C 95 °C
Operating Temperature-Min
Organization 32MX64 32MX64
Output Characteristics 3-STATE 3-STATE
Package Body Material UNSPECIFIED UNSPECIFIED
Package Code DIMM DIMM
Package Equivalence Code DIMM200,24 DIMM200,24
Package Shape RECTANGULAR RECTANGULAR
Package Style MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY
Qualification Status Not Qualified Not Qualified
Refresh Cycles 8192 8192
Self Refresh YES YES
Supply Current-Max 1.44 mA
Supply Voltage-Max (Vsup) 2.7 V 1.9 V
Supply Voltage-Min (Vsup) 2.3 V 1.7 V
Supply Voltage-Nom (Vsup) 2.5 V 1.8 V
Surface Mount NO NO
Technology CMOS CMOS
Temperature Grade COMMERCIAL OTHER
Terminal Finish TIN LEAD
Terminal Form NO LEAD NO LEAD
Terminal Pitch 0.6 mm 0.6 mm
Terminal Position ZIG-ZAG ZIG-ZAG
Base Number Matches 1 1
Moisture Sensitivity Level 2

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