M470L3223BT0-LA2
vs
V916916B24QAFW-E4
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
SAMSUNG SEMICONDUCTOR INC
PROMOS TECHNOLOGIES INC
Part Package Code
MODULE
MODULE
Package Description
,
ROHS COMPLIANT, SODIMM-200
Pin Count
200
200
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
HTS Code
8542.32.00.36
8542.32.00.36
Access Mode
FOUR BANK PAGE BURST
FOUR BANK PAGE BURST
Access Time-Max
0.75 ns
0.5 ns
Additional Feature
AUTO/SELF REFRESH
AUTO/SELF REFRESH
JESD-30 Code
R-XDMA-N200
R-XDMA-N200
Memory Density
2147483648 bit
2147483648 bit
Memory IC Type
DDR DRAM MODULE
DDR DRAM MODULE
Memory Width
64
64
Number of Functions
1
1
Number of Ports
1
1
Number of Terminals
200
200
Number of Words
33554432 words
33554432 words
Number of Words Code
32000000
32000000
Operating Mode
SYNCHRONOUS
SYNCHRONOUS
Operating Temperature-Max
70 °C
Operating Temperature-Min
Organization
32MX64
32MX64
Package Body Material
UNSPECIFIED
UNSPECIFIED
Package Code
DIMM
DIMM
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
MICROELECTRONIC ASSEMBLY
MICROELECTRONIC ASSEMBLY
Qualification Status
Not Qualified
Not Qualified
Self Refresh
YES
YES
Supply Voltage-Max (Vsup)
2.7 V
1.9 V
Supply Voltage-Min (Vsup)
2.3 V
1.7 V
Supply Voltage-Nom (Vsup)
2.5 V
1.8 V
Surface Mount
NO
NO
Technology
CMOS
CMOS
Temperature Grade
COMMERCIAL
Terminal Form
NO LEAD
NO LEAD
Terminal Position
DUAL
DUAL
Base Number Matches
1
1
Pbfree Code
JESD-609 Code
e4
Terminal Finish
GOLD
Compare M470L3223BT0-LA2 with alternatives
Compare V916916B24QAFW-E4 with alternatives