M470L3223BT0-LA0
vs
V916916B24QAFW-E4
feature comparison
Rohs Code |
No
|
Yes
|
Part Life Cycle Code |
Obsolete
|
Active
|
Ihs Manufacturer |
SAMSUNG SEMICONDUCTOR INC
|
PROMOS TECHNOLOGIES INC
|
Part Package Code |
MODULE
|
MODULE
|
Package Description |
,
|
ROHS COMPLIANT, SODIMM-200
|
Pin Count |
200
|
200
|
Reach Compliance Code |
unknown
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8542.32.00.36
|
8542.32.00.36
|
Access Mode |
FOUR BANK PAGE BURST
|
FOUR BANK PAGE BURST
|
Access Time-Max |
0.8 ns
|
0.5 ns
|
Additional Feature |
AUTO/SELF REFRESH
|
AUTO/SELF REFRESH
|
JESD-30 Code |
R-XDMA-N200
|
R-XDMA-N200
|
Memory Density |
2147483648 bit
|
2147483648 bit
|
Memory IC Type |
DDR DRAM MODULE
|
DDR DRAM MODULE
|
Memory Width |
64
|
64
|
Number of Functions |
1
|
1
|
Number of Ports |
1
|
1
|
Number of Terminals |
200
|
200
|
Number of Words |
33554432 words
|
33554432 words
|
Number of Words Code |
32000000
|
32000000
|
Operating Mode |
SYNCHRONOUS
|
SYNCHRONOUS
|
Operating Temperature-Max |
70 °C
|
|
Operating Temperature-Min |
|
|
Organization |
32MX64
|
32MX64
|
Package Body Material |
UNSPECIFIED
|
UNSPECIFIED
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
MICROELECTRONIC ASSEMBLY
|
MICROELECTRONIC ASSEMBLY
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Self Refresh |
YES
|
YES
|
Supply Voltage-Max (Vsup) |
2.7 V
|
1.9 V
|
Supply Voltage-Min (Vsup) |
2.3 V
|
1.7 V
|
Supply Voltage-Nom (Vsup) |
2.5 V
|
1.8 V
|
Surface Mount |
NO
|
NO
|
Technology |
CMOS
|
CMOS
|
Temperature Grade |
COMMERCIAL
|
|
Terminal Form |
NO LEAD
|
NO LEAD
|
Terminal Position |
DUAL
|
DUAL
|
Base Number Matches |
1
|
1
|
Pbfree Code |
|
Yes
|
JESD-609 Code |
|
e4
|
Package Code |
|
DIMM
|
Terminal Finish |
|
GOLD
|
|
|
|
Compare M470L3223BT0-LA0 with alternatives
Compare V916916B24QAFW-E4 with alternatives