M464S6453CKS-C1L vs W3DG6465V75D1 feature comparison

M464S6453CKS-C1L Samsung Semiconductor

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W3DG6465V75D1 Microsemi Corporation

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Rohs Code Yes No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC MICROSEMI CORP
Part Package Code MODULE SODIMM
Package Description DIMM, DIMM144,32 DIMM,
Pin Count 144 144
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.36 8542.32.00.36
Access Mode DUAL BANK PAGE BURST FOUR BANK PAGE BURST
Access Time-Max 6 ns
Additional Feature AUTO/SELF REFRESH AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 100 MHz
I/O Type COMMON
JESD-30 Code R-XDMA-N144 R-XZMA-N144
Memory Density 4294967296 bit 4294967296 bit
Memory IC Type SYNCHRONOUS DRAM MODULE SYNCHRONOUS DRAM MODULE
Memory Width 64 64
Number of Functions 1 1
Number of Ports 1 1
Number of Terminals 144 144
Number of Words 67108864 words 67108864 words
Number of Words Code 64000000 64000000
Operating Mode SYNCHRONOUS SYNCHRONOUS
Operating Temperature-Max 70 °C 70 °C
Operating Temperature-Min
Organization 64MX64 64MX64
Output Characteristics 3-STATE
Package Body Material UNSPECIFIED UNSPECIFIED
Package Code DIMM DIMM
Package Equivalence Code DIMM144,32
Package Shape RECTANGULAR RECTANGULAR
Package Style MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Cel) NOT SPECIFIED NOT SPECIFIED
Qualification Status Not Qualified Not Qualified
Refresh Cycles 8192
Self Refresh YES YES
Standby Current-Max 0.032 A
Supply Current-Max 1.76 mA
Supply Voltage-Max (Vsup) 3.6 V 3.6 V
Supply Voltage-Min (Vsup) 3 V 3 V
Supply Voltage-Nom (Vsup) 3.3 V 3.3 V
Surface Mount NO NO
Technology CMOS CMOS
Temperature Grade COMMERCIAL COMMERCIAL
Terminal Form NO LEAD NO LEAD
Terminal Pitch 0.8 mm
Terminal Position DUAL ZIG-ZAG
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Base Number Matches 1 2
Pbfree Code No

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