M464S1654BT1-C75 vs WED3DG6416V7D1 feature comparison

M464S1654BT1-C75 Samsung Semiconductor

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WED3DG6416V7D1 Microsemi Corporation

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Rohs Code No No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC MICROSEMI CORP
Part Package Code MODULE MODULE
Package Description DIMM, DIMM144,32 ,
Pin Count 144 144
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.32 8542.32.00.32
Access Mode FOUR BANK PAGE BURST FOUR BANK PAGE BURST
Access Time-Max 5.4 ns
Additional Feature AUTO/SELF REFRESH AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 133 MHz
I/O Type COMMON
JESD-30 Code R-XDMA-N144 R-XDMA-N144
Memory Density 1073741824 bit 1073741824 bit
Memory IC Type SYNCHRONOUS DRAM MODULE SYNCHRONOUS DRAM MODULE
Memory Width 64 64
Moisture Sensitivity Level 1
Number of Functions 1 1
Number of Ports 1 1
Number of Terminals 144 144
Number of Words 16777216 words 16777216 words
Number of Words Code 16000000 16000000
Operating Mode SYNCHRONOUS SYNCHRONOUS
Operating Temperature-Max 70 °C 70 °C
Operating Temperature-Min
Organization 16MX64 16MX64
Output Characteristics 3-STATE
Package Body Material UNSPECIFIED UNSPECIFIED
Package Code DIMM
Package Equivalence Code DIMM144,32
Package Shape RECTANGULAR RECTANGULAR
Package Style MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY
Qualification Status Not Qualified Not Qualified
Refresh Cycles 8192
Self Refresh YES YES
Standby Current-Max 0.008 A
Supply Current-Max 0.88 mA
Supply Voltage-Max (Vsup) 3.6 V 3.6 V
Supply Voltage-Min (Vsup) 3 V 3 V
Supply Voltage-Nom (Vsup) 3.3 V 3.3 V
Surface Mount NO NO
Technology CMOS CMOS
Temperature Grade COMMERCIAL COMMERCIAL
Terminal Form NO LEAD NO LEAD
Terminal Pitch 0.8 mm
Terminal Position DUAL DUAL
Base Number Matches 1 1
Pbfree Code No
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

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Compare WED3DG6416V7D1 with alternatives