M38510/20902BVA
vs
N82S281I
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
RAYTHEON SEMICONDUCTOR
SIGNETICS CORP
Package Description
0.25 X 1 INCH, DIP-18
,
Reach Compliance Code
unknown
unknown
Access Time-Max
90 ns
JESD-30 Code
R-XDIP-T18
R-CDIP-T24
Memory Density
1048576 bit
8192 bit
Memory IC Type
OTP ROM
OTP ROM
Memory Width
8
8
Number of Functions
1
1
Number of Terminals
18
24
Number of Words
2048 words
1024 words
Number of Words Code
128000
1000
Operating Mode
ASYNCHRONOUS
ASYNCHRONOUS
Operating Temperature-Max
125 °C
75 °C
Operating Temperature-Min
-55 °C
Organization
128KX8
1KX8
Package Body Material
UNSPECIFIED
CERAMIC, METAL-SEALED COFIRED
Package Code
DIP
DIP
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
IN-LINE
IN-LINE
Parallel/Serial
PARALLEL
PARALLEL
Qualification Status
Not Qualified
Not Qualified
Supply Current-Max
0.03 mA
Supply Voltage-Nom (Vsup)
5 V
5 V
Surface Mount
NO
NO
Technology
BIPOLAR
BIPOLAR
Temperature Grade
MILITARY
COMMERCIAL EXTENDED
Terminal Form
THROUGH-HOLE
THROUGH-HOLE
Terminal Position
DUAL
DUAL
Base Number Matches
7
3
ECCN Code
EAR99
HTS Code
8542.32.00.71
Output Characteristics
3-STATE
Compare M38510/20902BVA with alternatives
Compare N82S281I with alternatives