M38510/10106BEC
vs
M38510/10105BEX
feature comparison
Part Life Cycle Code |
Obsolete
|
Active
|
Ihs Manufacturer |
RAYTHEON SEMICONDUCTOR
|
MICROSS COMPONENTS
|
Package Description |
CERAMIC, DIP-16
|
DIP,
|
Reach Compliance Code |
unknown
|
compliant
|
Amplifier Type |
OPERATIONAL AMPLIFIER
|
OPERATIONAL AMPLIFIER
|
Average Bias Current-Max (IIB) |
0.003 µA
|
0.1 µA
|
Input Offset Voltage-Max |
1000 µV
|
3000 µV
|
JESD-30 Code |
R-CDIP-T16
|
R-CDIP-T16
|
Neg Supply Voltage Limit-Max |
-22 V
|
-22 V
|
Neg Supply Voltage-Nom (Vsup) |
-10 V
|
-10 V
|
Number of Functions |
2
|
2
|
Number of Terminals |
16
|
16
|
Operating Temperature-Max |
125 °C
|
125 °C
|
Operating Temperature-Min |
-55 °C
|
-55 °C
|
Package Body Material |
CERAMIC, METAL-SEALED COFIRED
|
CERAMIC, GLASS-SEALED
|
Package Code |
DIP
|
DIP
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
IN-LINE
|
IN-LINE
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Screening Level |
MIL-PRF-38535 Class B
|
MIL-M-38510 Class B
|
Supply Voltage Limit-Max |
22 V
|
22 V
|
Supply Voltage-Nom (Vsup) |
10 V
|
10 V
|
Surface Mount |
NO
|
NO
|
Temperature Grade |
MILITARY
|
MILITARY
|
Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
Terminal Position |
DUAL
|
DUAL
|
Base Number Matches |
1
|
12
|
Part Package Code |
|
DIP
|
Pin Count |
|
16
|
ECCN Code |
|
EAR99
|
HTS Code |
|
8542.33.00.01
|
Architecture |
|
VOLTAGE-FEEDBACK
|
Common-mode Reject Ratio-Min |
|
80 dB
|
Frequency Compensation |
|
YES
|
Input Offset Current-Max (IIO) |
|
0.01 µA
|
JESD-609 Code |
|
e4
|
Low-Bias |
|
NO
|
Low-Offset |
|
NO
|
Micropower |
|
NO
|
Power |
|
NO
|
Programmable Power |
|
YES
|
Slew Rate-Min |
|
0.3 V/us
|
Supply Current-Max |
|
3 mA
|
Terminal Finish |
|
PALLADIUM GOLD
|
Voltage Gain-Min |
|
25000
|
|
|
|
Compare M38510/10106BEC with alternatives
Compare M38510/10105BEX with alternatives