M38510/05652BX
vs
CD4018BFMSH
feature comparison
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
HARRIS SEMICONDUCTOR
|
INTERSIL CORP
|
| Package Description |
DIP,
|
DIP, DIP16,.3
|
| Reach Compliance Code |
unknown
|
not_compliant
|
| HTS Code |
8542.39.00.01
|
8542.39.00.01
|
| Additional Feature |
JOHNSON COUNTER, PROGRAMMABLE WITH EXT CONNECTIONS
|
|
| Count Direction |
UP
|
UP
|
| Family |
4000/14000/40000
|
4000/14000/40000
|
| JESD-30 Code |
R-GDIP-T16
|
R-XDIP-T16
|
| Length |
19.56 mm
|
|
| Load/Preset Input |
YES
|
YES
|
| Logic IC Type |
RING COUNTER
|
DECADE COUNTER
|
| Mode of Operation |
SYNCHRONOUS
|
SYNCHRONOUS
|
| Number of Bits |
5
|
5
|
| Number of Functions |
1
|
1
|
| Number of Terminals |
16
|
16
|
| Operating Temperature-Max |
125 °C
|
125 °C
|
| Operating Temperature-Min |
-55 °C
|
-55 °C
|
| Package Body Material |
CERAMIC, GLASS-SEALED
|
CERAMIC
|
| Package Code |
DIP
|
DIP
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
IN-LINE
|
IN-LINE
|
| Peak Reflow Temperature (Cel) |
NOT APPLICABLE
|
|
| Propagation Delay (tpd) |
400 ns
|
400 ns
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Seated Height-Max |
5.08 mm
|
|
| Supply Voltage-Max (Vsup) |
18 V
|
18 V
|
| Supply Voltage-Min (Vsup) |
3 V
|
3 V
|
| Supply Voltage-Nom (Vsup) |
5 V
|
5 V
|
| Surface Mount |
NO
|
NO
|
| Technology |
CMOS
|
CMOS
|
| Temperature Grade |
MILITARY
|
MILITARY
|
| Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
| Terminal Pitch |
2.54 mm
|
2.54 mm
|
| Terminal Position |
DUAL
|
DUAL
|
| Time@Peak Reflow Temperature-Max (s) |
NOT APPLICABLE
|
|
| Trigger Type |
POSITIVE EDGE
|
POSITIVE EDGE
|
| Width |
7.62 mm
|
|
| fmax-Min |
8.5 MHz
|
|
| Base Number Matches |
3
|
2
|
| Rohs Code |
|
No
|
| JESD-609 Code |
|
e0
|
| Load Capacitance (CL) |
|
50 pF
|
| Max Frequency@Nom-Sup |
|
3000000 Hz
|
| Max I(ol) |
|
0.00035999999999999997 A
|
| Package Equivalence Code |
|
DIP16,.3
|
| Prop. Delay@Nom-Sup |
|
540 ns
|
| Screening Level |
|
38535V;38534K;883S
|
| Terminal Finish |
|
Tin/Lead (Sn/Pb)
|
| Total Dose |
|
1M Rad(Si) V
|
|
|
|
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