M378T6453FG0-CE6 vs M378T6453FG3-CE600 feature comparison

M378T6453FG0-CE6 Samsung Semiconductor

Buy Now Datasheet

M378T6453FG3-CE600 Samsung Semiconductor

Buy Now Datasheet
Rohs Code No Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC SAMSUNG SEMICONDUCTOR INC
Part Package Code DIMM
Package Description DIMM, DIMM240,40 DIMM, DIMM240,40
Pin Count 240
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.36 8542.32.00.36
Access Mode DUAL BANK PAGE BURST
Access Time-Max 0.45 ns 0.45 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 333 MHz 333 MHz
I/O Type COMMON COMMON
JESD-30 Code R-XDMA-N240 R-PDMA-N240
JESD-609 Code e0 e3
Memory Density 4294967296 bit 4294967296 bit
Memory IC Type DDR DRAM MODULE DDR DRAM MODULE
Memory Width 64 64
Number of Functions 1
Number of Ports 1
Number of Terminals 240 240
Number of Words 67108864 words 67108864 words
Number of Words Code 64000000 64000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 85 °C 95 °C
Operating Temperature-Min
Organization 64MX64 64MX64
Output Characteristics 3-STATE 3-STATE
Package Body Material UNSPECIFIED PLASTIC/EPOXY
Package Code DIMM DIMM
Package Equivalence Code DIMM240,40 DIMM240,40
Package Shape RECTANGULAR RECTANGULAR
Package Style MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY
Qualification Status Not Qualified Not Qualified
Refresh Cycles 8192 8192
Self Refresh YES
Standby Current-Max 0.128 A 0.128 A
Supply Current-Max 2.72 mA 2.72 mA
Supply Voltage-Max (Vsup) 1.9 V
Supply Voltage-Min (Vsup) 1.7 V
Supply Voltage-Nom (Vsup) 1.8 V 1.8 V
Surface Mount NO NO
Technology CMOS CMOS
Temperature Grade OTHER OTHER
Terminal Finish TIN LEAD MATTE TIN
Terminal Form NO LEAD NO LEAD
Terminal Pitch 1 mm 1 mm
Terminal Position DUAL DUAL
Base Number Matches 1 1
Pbfree Code Yes
Moisture Sensitivity Level 1

Compare M378T6453FG0-CE6 with alternatives

Compare M378T6453FG3-CE600 with alternatives