M378T3354BG0-LE6
vs
MT4HTF3264AY-53EX
feature comparison
| Part Life Cycle Code |
Obsolete
|
Active
|
| Ihs Manufacturer |
SAMSUNG SEMICONDUCTOR INC
|
MICRON TECHNOLOGY INC
|
| Part Package Code |
DIMM
|
DIMM
|
| Package Description |
DIMM,
|
DIMM,
|
| Pin Count |
240
|
240
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
|
| HTS Code |
8542.32.00.36
|
|
| Access Mode |
FOUR BANK PAGE BURST
|
SINGLE BANK PAGE BURST
|
| Access Time-Max |
0.45 ns
|
0.5 ns
|
| Additional Feature |
AUTO/SELF REFRESH
|
AUTO/SELF REFRESH
|
| JESD-30 Code |
R-XDMA-N240
|
R-XDMA-N240
|
| Memory Density |
2147483648 bit
|
2147483648 bit
|
| Memory IC Type |
DDR DRAM MODULE
|
DDR DRAM MODULE
|
| Memory Width |
64
|
64
|
| Number of Functions |
1
|
1
|
| Number of Ports |
1
|
1
|
| Number of Terminals |
240
|
240
|
| Number of Words |
33554432 words
|
33554432 words
|
| Number of Words Code |
32000000
|
32000000
|
| Operating Mode |
SYNCHRONOUS
|
SYNCHRONOUS
|
| Organization |
32MX64
|
32MX64
|
| Package Body Material |
UNSPECIFIED
|
UNSPECIFIED
|
| Package Code |
DIMM
|
DIMM
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
MICROELECTRONIC ASSEMBLY
|
MICROELECTRONIC ASSEMBLY
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Self Refresh |
YES
|
|
| Supply Voltage-Max (Vsup) |
1.9 V
|
1.9 V
|
| Supply Voltage-Min (Vsup) |
1.7 V
|
1.7 V
|
| Supply Voltage-Nom (Vsup) |
1.8 V
|
1.8 V
|
| Surface Mount |
NO
|
NO
|
| Technology |
CMOS
|
CMOS
|
| Terminal Form |
NO LEAD
|
NO LEAD
|
| Terminal Position |
DUAL
|
DUAL
|
| Base Number Matches |
1
|
1
|
| Pbfree Code |
|
Yes
|
| Rohs Code |
|
Yes
|
| JESD-609 Code |
|
e4
|
| Operating Temperature-Max |
|
55 °C
|
| Operating Temperature-Min |
|
|
| Peak Reflow Temperature (Cel) |
|
260
|
| Temperature Grade |
|
COMMERCIAL
|
| Terminal Finish |
|
GOLD
|
| Time@Peak Reflow Temperature-Max (s) |
|
30
|
|
|
|
Compare M378T3354BG0-LE6 with alternatives
Compare MT4HTF3264AY-53EX with alternatives