M378T3253FG0-CE600 vs HYS64T32000HU-3S-B feature comparison

M378T3253FG0-CE600 Samsung Semiconductor

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HYS64T32000HU-3S-B Qimonda AG

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Pbfree Code Yes
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC QIMONDA AG
Package Description DIMM, DIMM240,40 DIMM, DIMM240,40
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.36 8542.32.00.36
Access Time-Max 0.45 ns 0.45 ns
Clock Frequency-Max (fCLK) 333 MHz 333 MHz
I/O Type COMMON COMMON
JESD-30 Code R-PDMA-N240 R-XDMA-N240
JESD-609 Code e3
Memory Density 2147483648 bit 2147483648 bit
Memory IC Type DDR DRAM MODULE DDR DRAM MODULE
Memory Width 64 64
Moisture Sensitivity Level 1
Number of Terminals 240 240
Number of Words 33554432 words 33554432 words
Number of Words Code 32000000 32000000
Operating Temperature-Max 95 °C 65 °C
Operating Temperature-Min
Organization 32MX64 32MX64
Output Characteristics 3-STATE 3-STATE
Package Body Material PLASTIC/EPOXY UNSPECIFIED
Package Code DIMM DIMM
Package Equivalence Code DIMM240,40 DIMM240,40
Package Shape RECTANGULAR RECTANGULAR
Package Style MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY
Qualification Status Not Qualified Not Qualified
Refresh Cycles 8192 8192
Supply Current-Max 2.12 mA 0.96 mA
Supply Voltage-Nom (Vsup) 1.8 V 1.8 V
Surface Mount NO NO
Technology CMOS CMOS
Temperature Grade OTHER COMMERCIAL
Terminal Finish MATTE TIN
Terminal Form NO LEAD NO LEAD
Terminal Pitch 1 mm 1 mm
Terminal Position DUAL DUAL
Base Number Matches 1 2
Part Package Code DIMM
Pin Count 240
Access Mode SINGLE BANK PAGE BURST
Additional Feature AUTO/SELF REFRESH
Number of Functions 1
Number of Ports 1
Operating Mode SYNCHRONOUS
Peak Reflow Temperature (Cel) NOT SPECIFIED
Self Refresh YES
Supply Voltage-Max (Vsup) 1.9 V
Supply Voltage-Min (Vsup) 1.7 V
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Compare M378T3253FG0-CE600 with alternatives

Compare HYS64T32000HU-3S-B with alternatives