M36W832BE70ZA1S
vs
RD28F1604C3BD70
feature comparison
Part Life Cycle Code |
Transferred
|
Obsolete
|
Ihs Manufacturer |
STMICROELECTRONICS
|
INTEL CORP
|
Part Package Code |
BGA
|
BGA
|
Package Description |
LFBGA,
|
LFBGA, BGA66,8X12,32
|
Pin Count |
66
|
66
|
Reach Compliance Code |
unknown
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8542.32.00.71
|
8542.32.00.71
|
Additional Feature |
SRAM IS ORGANISED AS 512K X 16
|
SRAM IS ORGANIZED AS 256K X 16
|
JESD-30 Code |
R-PBGA-B66
|
R-PBGA-B66
|
Length |
12 mm
|
10 mm
|
Memory Density |
33554432 bit
|
16777216 bit
|
Memory IC Type |
MEMORY CIRCUIT
|
MEMORY CIRCUIT
|
Memory Width |
16
|
16
|
Number of Functions |
1
|
1
|
Number of Terminals |
66
|
66
|
Number of Words |
2097152 words
|
1048576 words
|
Number of Words Code |
2000000
|
1000000
|
Operating Mode |
ASYNCHRONOUS
|
ASYNCHRONOUS
|
Operating Temperature-Max |
70 °C
|
85 °C
|
Operating Temperature-Min |
|
-25 °C
|
Organization |
2MX16
|
1MX16
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Code |
LFBGA
|
LFBGA
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
GRID ARRAY, LOW PROFILE, FINE PITCH
|
GRID ARRAY, LOW PROFILE, FINE PITCH
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Seated Height-Max |
1.4 mm
|
1.4 mm
|
Supply Voltage-Max (Vsup) |
3.6 V
|
3.3 V
|
Supply Voltage-Min (Vsup) |
2.7 V
|
2.7 V
|
Supply Voltage-Nom (Vsup) |
3 V
|
3 V
|
Surface Mount |
YES
|
YES
|
Technology |
CMOS
|
CMOS
|
Temperature Grade |
COMMERCIAL
|
COMMERCIAL EXTENDED
|
Terminal Form |
BALL
|
BALL
|
Terminal Pitch |
0.8 mm
|
0.8 mm
|
Terminal Position |
BOTTOM
|
BOTTOM
|
Width |
8 mm
|
8 mm
|
Base Number Matches |
2
|
1
|
Rohs Code |
|
No
|
Access Time-Max |
|
70 ns
|
JESD-609 Code |
|
e0
|
Mixed Memory Type |
|
FLASH+SRAM
|
Package Equivalence Code |
|
BGA66,8X12,32
|
Standby Current-Max |
|
0.000005 A
|
Supply Current-Max |
|
0.045 mA
|
Terminal Finish |
|
Tin/Lead (Sn/Pb)
|
|
|
|
Compare M36W832BE70ZA1S with alternatives
Compare RD28F1604C3BD70 with alternatives