M368L3313ETM-CA2
vs
HYMP532S64CLP6-C4
feature comparison
All Stats
Differences Only
Pbfree Code
No
Yes
Rohs Code
No
Yes
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
SAMSUNG SEMICONDUCTOR INC
SK HYNIX INC
Part Package Code
DIMM
DIMM
Package Description
DIMM, DIMM184
DIMM, DIMM200,24
Pin Count
184
200
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
HTS Code
8542.32.00.36
8542.32.00.36
Access Mode
FOUR BANK PAGE BURST
SINGLE BANK PAGE BURST
Access Time-Max
0.75 ns
0.5 ns
Additional Feature
AUTO/SELF REFRESH
AUTO/SELF REFRESH
Clock Frequency-Max (fCLK)
133 MHz
267 MHz
I/O Type
COMMON
COMMON
JESD-30 Code
R-XDMA-N184
R-XDMA-N200
JESD-609 Code
e0
Memory Density
2147483648 bit
2147483648 bit
Memory IC Type
DDR DRAM MODULE
DDR DRAM MODULE
Memory Width
64
64
Number of Functions
1
1
Number of Ports
1
1
Number of Terminals
184
200
Number of Words
33554432 words
33554432 words
Number of Words Code
32000000
32000000
Operating Mode
SYNCHRONOUS
SYNCHRONOUS
Operating Temperature-Max
70 °C
55 °C
Operating Temperature-Min
Organization
32MX64
32MX64
Output Characteristics
3-STATE
3-STATE
Package Body Material
UNSPECIFIED
UNSPECIFIED
Package Code
DIMM
DIMM
Package Equivalence Code
DIMM184
DIMM200,24
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
MICROELECTRONIC ASSEMBLY
MICROELECTRONIC ASSEMBLY
Qualification Status
Not Qualified
Not Qualified
Refresh Cycles
4096
8192
Self Refresh
YES
YES
Supply Current-Max
2.32 mA
1.28 mA
Supply Voltage-Max (Vsup)
2.7 V
1.9 V
Supply Voltage-Min (Vsup)
2.3 V
1.7 V
Supply Voltage-Nom (Vsup)
2.5 V
1.8 V
Surface Mount
NO
NO
Technology
CMOS
CMOS
Temperature Grade
COMMERCIAL
COMMERCIAL
Terminal Finish
TIN LEAD
Terminal Form
NO LEAD
NO LEAD
Terminal Pitch
1.27 mm
0.6 mm
Terminal Position
DUAL
DUAL
Base Number Matches
1
1
Length
67.6 mm
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
20
Compare M368L3313ETM-CA2 with alternatives
Compare HYMP532S64CLP6-C4 with alternatives