M368L3313BT1-LA0 vs HYMD232M646CLF6-L feature comparison

M368L3313BT1-LA0 Samsung Semiconductor

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HYMD232M646CLF6-L SK Hynix Inc

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Rohs Code No No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC SK HYNIX INC
Part Package Code DIMM SODIMM
Package Description DIMM, DIMM184 DIMM, DIMM200,24
Pin Count 184 200
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.36 8542.32.00.36
Access Mode FOUR BANK PAGE BURST DUAL BANK PAGE BURST
Access Time-Max 0.8 ns 0.8 ns
Additional Feature AUTO/SELF REFRESH AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 125 MHz 100 MHz
I/O Type COMMON COMMON
JESD-30 Code R-XDMA-N184 R-XZMA-N200
Memory Density 2147483648 bit 2147483648 bit
Memory IC Type DDR DRAM MODULE DDR DRAM MODULE
Memory Width 64 64
Moisture Sensitivity Level 1
Number of Functions 1 1
Number of Ports 1 1
Number of Terminals 184 200
Number of Words 33554432 words 33554432 words
Number of Words Code 32000000 32000000
Operating Mode SYNCHRONOUS SYNCHRONOUS
Operating Temperature-Max 70 °C 70 °C
Operating Temperature-Min
Organization 32MX64 32MX64
Output Characteristics 3-STATE 3-STATE
Package Body Material UNSPECIFIED UNSPECIFIED
Package Code DIMM DIMM
Package Equivalence Code DIMM184 DIMM200,24
Package Shape RECTANGULAR RECTANGULAR
Package Style MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY
Qualification Status Not Qualified Not Qualified
Refresh Cycles 4096 8192
Self Refresh YES YES
Supply Voltage-Max (Vsup) 2.7 V 2.7 V
Supply Voltage-Min (Vsup) 2.3 V 2.3 V
Supply Voltage-Nom (Vsup) 2.5 V 2.5 V
Surface Mount NO NO
Technology CMOS CMOS
Temperature Grade COMMERCIAL COMMERCIAL
Terminal Form NO LEAD NO LEAD
Terminal Pitch 1.27 mm 0.6 mm
Terminal Position DUAL ZIG-ZAG
Base Number Matches 1 1
Peak Reflow Temperature (Cel) NOT SPECIFIED
Standby Current-Max 0.16 A
Supply Current-Max 1.36 mA
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

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Compare HYMD232M646CLF6-L with alternatives