M312L5623MTS-CB0 vs MT18VDDT25672AY-26A feature comparison

M312L5623MTS-CB0 Samsung Semiconductor

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MT18VDDT25672AY-26A Micron Technology Inc

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Rohs Code No Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC MICRON TECHNOLOGY INC
Part Package Code DIMM
Package Description DIMM, DIMM184 DIMM, DIMM184
Pin Count 184
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.36 8542.32.00.36
Access Mode FOUR BANK PAGE BURST
Access Time-Max 0.75 ns 0.75 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 133 MHz 133 MHz
I/O Type COMMON COMMON
JESD-30 Code R-XDMA-N184 R-PDMA-N184
Memory Density 19327352832 bit 19327352832 bit
Memory IC Type DDR DRAM MODULE DDR DRAM MODULE
Memory Width 72 72
Moisture Sensitivity Level 1
Number of Functions 1
Number of Ports 1
Number of Terminals 184 184
Number of Words 268435456 words 268435456 words
Number of Words Code 256000000 256000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 70 °C 70 °C
Operating Temperature-Min
Organization 256MX72 256MX72
Output Characteristics 3-STATE 3-STATE
Package Body Material UNSPECIFIED PLASTIC/EPOXY
Package Code DIMM DIMM
Package Equivalence Code DIMM184 DIMM184
Package Shape RECTANGULAR RECTANGULAR
Package Style MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY
Qualification Status Not Qualified Not Qualified
Refresh Cycles 8192 8192
Self Refresh YES
Supply Current-Max 4.575 mA 5.94 mA
Supply Voltage-Max (Vsup) 2.7 V
Supply Voltage-Min (Vsup) 2.3 V
Supply Voltage-Nom (Vsup) 2.5 V 2.5 V
Surface Mount NO NO
Technology CMOS CMOS
Temperature Grade COMMERCIAL COMMERCIAL
Terminal Form NO LEAD NO LEAD
Terminal Pitch 1.27 mm 1.27 mm
Terminal Position DUAL DUAL
Base Number Matches 1 2
Standby Current-Max 0.18 A

Compare M312L5623MTS-CB0 with alternatives

Compare MT18VDDT25672AY-26A with alternatives