M312L2920BG0-CA2 vs M312L2920DUS-CB0 feature comparison

M312L2920BG0-CA2 Samsung Semiconductor

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M312L2920DUS-CB0 Samsung Semiconductor

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Rohs Code No Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC SAMSUNG SEMICONDUCTOR INC
Part Package Code DIMM DIMM
Package Description DIMM, DIMM184 DIMM, DIMM184
Pin Count 184 184
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.36 8542.32.00.36
Access Mode FOUR BANK PAGE BURST SINGLE BANK PAGE BURST
Access Time-Max 0.75 ns 0.75 ns
Additional Feature AUTO/SELF REFRESH AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 133 MHz 133 MHz
I/O Type COMMON COMMON
JESD-30 Code R-XDMA-N184 R-XDMA-N184
Memory Density 9663676416 bit 9663676416 bit
Memory IC Type DDR DRAM MODULE DDR DRAM MODULE
Memory Width 72 72
Moisture Sensitivity Level 1 3
Number of Functions 1 1
Number of Ports 1 1
Number of Terminals 184 184
Number of Words 134217728 words 134217728 words
Number of Words Code 128000000 128000000
Operating Mode SYNCHRONOUS SYNCHRONOUS
Operating Temperature-Max 70 °C 70 °C
Operating Temperature-Min
Organization 128MX72 128MX72
Output Characteristics 3-STATE 3-STATE
Package Body Material UNSPECIFIED UNSPECIFIED
Package Code DIMM DIMM
Package Equivalence Code DIMM184 DIMM184
Package Shape RECTANGULAR RECTANGULAR
Package Style MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY
Qualification Status Not Qualified Not Qualified
Refresh Cycles 8192 8192
Self Refresh YES YES
Standby Current-Max 0.42 A 0.42 A
Supply Current-Max 6.57 mA 6.48 mA
Supply Voltage-Max (Vsup) 2.7 V 2.7 V
Supply Voltage-Min (Vsup) 2.3 V 2.3 V
Supply Voltage-Nom (Vsup) 2.5 V 2.5 V
Surface Mount NO NO
Technology CMOS CMOS
Temperature Grade COMMERCIAL COMMERCIAL
Terminal Form NO LEAD NO LEAD
Terminal Pitch 1.27 mm 1.27 mm
Terminal Position DUAL DUAL
Base Number Matches 1 1
Peak Reflow Temperature (Cel) 260

Compare M312L2920BG0-CA2 with alternatives

Compare M312L2920DUS-CB0 with alternatives