M29W160ET80ZA3S
vs
M29W160ET80ZA3SE
feature comparison
| Rohs Code |
No
|
Yes
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
MICRON TECHNOLOGY INC
|
MICRON TECHNOLOGY INC
|
| Package Description |
6 X 8 MM, 0.80 MM PITCH, TFBGA-48
|
TFBGA,
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8542.32.00.51
|
8542.32.00.51
|
| Access Time-Max |
70 ns
|
70 ns
|
| Alternate Memory Width |
8
|
8
|
| Boot Block |
TOP
|
TOP
|
| JESD-30 Code |
R-PBGA-B48
|
R-PBGA-B48
|
| Length |
8 mm
|
8 mm
|
| Memory Density |
16777216 bit
|
16777216 bit
|
| Memory IC Type |
FLASH
|
FLASH
|
| Memory Width |
16
|
16
|
| Number of Functions |
1
|
1
|
| Number of Terminals |
48
|
48
|
| Number of Words |
1048576 words
|
1048576 words
|
| Number of Words Code |
1000000
|
1000000
|
| Operating Mode |
ASYNCHRONOUS
|
ASYNCHRONOUS
|
| Operating Temperature-Max |
125 °C
|
125 °C
|
| Operating Temperature-Min |
-40 °C
|
-40 °C
|
| Organization |
1MX16
|
1MX16
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Code |
TFBGA
|
TFBGA
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
GRID ARRAY, THIN PROFILE, FINE PITCH
|
GRID ARRAY, THIN PROFILE, FINE PITCH
|
| Parallel/Serial |
PARALLEL
|
PARALLEL
|
| Programming Voltage |
3 V
|
3 V
|
| Seated Height-Max |
1.2 mm
|
1.2 mm
|
| Supply Voltage-Max (Vsup) |
3.6 V
|
3.6 V
|
| Supply Voltage-Min (Vsup) |
2.7 V
|
2.7 V
|
| Supply Voltage-Nom (Vsup) |
3 V
|
3 V
|
| Surface Mount |
YES
|
YES
|
| Technology |
CMOS
|
CMOS
|
| Temperature Grade |
AUTOMOTIVE
|
AUTOMOTIVE
|
| Terminal Form |
BALL
|
BALL
|
| Terminal Pitch |
0.8 mm
|
0.8 mm
|
| Terminal Position |
BOTTOM
|
BOTTOM
|
| Type |
NOR TYPE
|
NOR TYPE
|
| Width |
6 mm
|
6 mm
|
| Base Number Matches |
2
|
2
|
| Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
| Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
|
|
|
Compare M29W160ET80ZA3S with alternatives
Compare M29W160ET80ZA3SE with alternatives