M29W160ET80ZA3
vs
EN29LV160T-70BI
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Contact Manufacturer
Ihs Manufacturer
MICRON TECHNOLOGY INC
ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC
Package Description
6 X 8 MM, 0.80 MM PITCH, TFBGA-48
TFBGA, BGA48,6X8,32
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8542.32.00.51
8542.32.00.51
Access Time-Max
70 ns
70 ns
Alternate Memory Width
8
8
Boot Block
TOP
TOP
JESD-30 Code
R-PBGA-B48
R-PBGA-B48
Length
8 mm
8 mm
Memory Density
16777216 bit
16777216 bit
Memory IC Type
FLASH
FLASH
Memory Width
16
16
Number of Functions
1
1
Number of Terminals
48
48
Number of Words
1048576 words
1048576 words
Number of Words Code
1000000
1000000
Operating Mode
ASYNCHRONOUS
ASYNCHRONOUS
Operating Temperature-Max
125 °C
85 °C
Operating Temperature-Min
-40 °C
-40 °C
Organization
1MX16
1MX16
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Code
TFBGA
TFBGA
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
GRID ARRAY, THIN PROFILE, FINE PITCH
GRID ARRAY, THIN PROFILE, FINE PITCH
Parallel/Serial
PARALLEL
PARALLEL
Programming Voltage
3 V
3 V
Seated Height-Max
1.2 mm
1.1 mm
Supply Voltage-Max (Vsup)
3.6 V
3.6 V
Supply Voltage-Min (Vsup)
2.7 V
2.7 V
Supply Voltage-Nom (Vsup)
3 V
3 V
Surface Mount
YES
YES
Technology
CMOS
CMOS
Temperature Grade
AUTOMOTIVE
INDUSTRIAL
Terminal Form
BALL
BALL
Terminal Pitch
0.8 mm
0.8 mm
Terminal Position
BOTTOM
BOTTOM
Type
NOR TYPE
NOR TYPE
Width
6 mm
6 mm
Base Number Matches
2
2
Rohs Code
Command User Interface
YES
Common Flash Interface
YES
Data Polling
YES
Data Retention Time-Min
20
Endurance
100000 Write/Erase Cycles
Number of Sectors/Size
1,2,1,31
Package Equivalence Code
BGA48,6X8,32
Qualification Status
Not Qualified
Ready/Busy
YES
Sector Size
16K,8K,32K,64K
Standby Current-Max
0.000005 A
Supply Current-Max
0.016 mA
Toggle Bit
YES
Write Cycle Time-Max (tWC)
0.00007 ms
Compare M29W160ET80ZA3 with alternatives
Compare EN29LV160T-70BI with alternatives