M29F040B55K3F
vs
MFM8516JMB-55E
feature comparison
Part Life Cycle Code |
Obsolete
|
Obsolete
|
Ihs Manufacturer |
NUMONYX
|
APTA GROUP INC
|
Part Package Code |
QFJ
|
QFJ
|
Package Description |
LEAD FREE, PLASTIC, LCC-32
|
QCCJ,
|
Pin Count |
32
|
32
|
Reach Compliance Code |
unknown
|
unknown
|
ECCN Code |
EAR99
|
3A001.A.2.C
|
HTS Code |
8542.32.00.51
|
8542.32.00.51
|
Access Time-Max |
55 ns
|
55 ns
|
JESD-30 Code |
R-PQCC-J32
|
R-CQCC-J32
|
JESD-609 Code |
e3
|
|
Length |
13.97 mm
|
14.03 mm
|
Memory Density |
4194304 bit
|
4194304 bit
|
Memory IC Type |
FLASH
|
FLASH
|
Memory Width |
8
|
8
|
Number of Functions |
1
|
1
|
Number of Terminals |
32
|
32
|
Number of Words |
524288 words
|
524288 words
|
Number of Words Code |
512000
|
512000
|
Operating Mode |
ASYNCHRONOUS
|
ASYNCHRONOUS
|
Operating Temperature-Max |
125 °C
|
125 °C
|
Operating Temperature-Min |
-40 °C
|
-55 °C
|
Organization |
512KX8
|
512KX8
|
Package Body Material |
PLASTIC/EPOXY
|
CERAMIC, METAL-SEALED COFIRED
|
Package Code |
QCCJ
|
QCCJ
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
CHIP CARRIER
|
CHIP CARRIER
|
Parallel/Serial |
PARALLEL
|
PARALLEL
|
Peak Reflow Temperature (Cel) |
250
|
|
Programming Voltage |
5 V
|
5 V
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Seated Height-Max |
3.56 mm
|
4.32 mm
|
Supply Voltage-Max (Vsup) |
5.5 V
|
5.5 V
|
Supply Voltage-Min (Vsup) |
4.5 V
|
4.5 V
|
Supply Voltage-Nom (Vsup) |
5 V
|
5 V
|
Surface Mount |
YES
|
YES
|
Technology |
CMOS
|
CMOS
|
Temperature Grade |
AUTOMOTIVE
|
MILITARY
|
Terminal Finish |
MATTE TIN
|
|
Terminal Form |
J BEND
|
J BEND
|
Terminal Pitch |
1.27 mm
|
1.27 mm
|
Terminal Position |
QUAD
|
QUAD
|
Time@Peak Reflow Temperature-Max (s) |
40
|
|
Type |
NOR TYPE
|
|
Width |
11.43 mm
|
11.5 mm
|
Base Number Matches |
2
|
1
|
Screening Level |
|
MIL-STD-883
|
|
|
|
Compare M29F040B55K3F with alternatives
Compare MFM8516JMB-55E with alternatives