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M29F040-90NRM vs M29F040-90NRB/C feature comparison

M29F040-90NRM Thales Group

Buy Now Datasheet

M29F040-90NRB/C Thales Group

Buy Now Datasheet
Part Life Cycle Code Transferred Transferred
Ihs Manufacturer THOMSON-CSF SEMICONDUCTORS THOMSON-CSF SEMICONDUCTORS
Reach Compliance Code unknown unknown
ECCN Code 3A001.A.2.C 3A001.A.2.C
HTS Code 8542.32.00.51 8542.32.00.51
Access Time-Max 90 ns 90 ns
Additional Feature 100,000 PROGRAM/ERASE CYCLES 100,000 PROGRAM/ERASE CYCLES
JESD-30 Code R-PDSO-G32 R-PDSO-G32
Memory Density 4194304 bit 4194304 bit
Memory IC Type FLASH FLASH
Memory Width 8 8
Number of Functions 1 1
Number of Terminals 32 32
Number of Words 524288 words 524288 words
Number of Words Code 512000 512000
Operating Mode ASYNCHRONOUS ASYNCHRONOUS
Operating Temperature-Max 125 °C 125 °C
Operating Temperature-Min -55 °C -55 °C
Organization 512KX8 512KX8
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Parallel/Serial PARALLEL PARALLEL
Programming Voltage 5 V 5 V
Qualification Status Not Qualified Not Qualified
Supply Voltage-Max (Vsup) 5.5 V 5.5 V
Supply Voltage-Min (Vsup) 4.5 V 4.5 V
Supply Voltage-Nom (Vsup) 5 V 5 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade MILITARY MILITARY
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Type NOR TYPE NOR TYPE
Base Number Matches 1 1
Memory » Flash Memories
Memory » Flash Memories

Compare M29F040-90NRM with alternatives

Compare M29F040-90NRB/C with alternatives