M25PX64STVME3EB vs N25Q032A13EF640F feature comparison

M25PX64STVME3EB Micron Technology Inc

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N25Q032A13EF640F Micron Technology Inc

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer MICRON TECHNOLOGY INC MICRON TECHNOLOGY INC
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.51 8542.32.00.51
Memory IC Type FLASH FLASH
Programming Voltage 2.7 V 2.7 V
Base Number Matches 1 1
Pbfree Code Yes
Rohs Code Yes
Samacsys Manufacturer Micron
Clock Frequency-Max (fCLK) 108 MHz
Data Retention Time-Min 20
Endurance 100000 Write/Erase Cycles
JESD-30 Code R-PDSO-N8
Length 6 mm
Memory Density 33554432 bit
Memory Width 8
Number of Functions 1
Number of Terminals 8
Number of Words 4194304 words
Number of Words Code 4000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 85 °C
Operating Temperature-Min -40 °C
Organization 4MX8
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code HVSON
Package Equivalence Code SOLCC8,.25
Package Shape RECTANGULAR
Package Style SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE
Parallel/Serial SERIAL
Peak Reflow Temperature (Cel) 260
Qualification Status Not Qualified
Seated Height-Max 1 mm
Serial Bus Type QSPI
Standby Current-Max 0.0001 A
Supply Current-Max 0.02 mA
Supply Voltage-Max (Vsup) 3.6 V
Supply Voltage-Min (Vsup) 2.7 V
Supply Voltage-Nom (Vsup) 3 V
Surface Mount YES
Technology CMOS
Temperature Grade INDUSTRIAL
Terminal Form NO LEAD
Terminal Pitch 1.27 mm
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Type NOR TYPE
Width 5 mm
Write Protection HARDWARE/SOFTWARE

Compare M25PX64STVME3EB with alternatives

Compare N25Q032A13EF640F with alternatives