M14D5121632A-1.5BG2M vs M14D5121632A-1.5BIAG2A feature comparison

M14D5121632A-1.5BG2M Elite Semiconductor Memory Technology Inc

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M14D5121632A-1.5BIAG2A Elite Semiconductor Memory Technology Inc

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Rohs Code Yes Yes
Part Life Cycle Code Contact Manufacturer Contact Manufacturer
Ihs Manufacturer ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC ELITE SEMICONDUCTOR MICROELECTRONICS TECHNOLOGYINC
Package Description TFBGA, BGA-84
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.28 8542.32.00.28
Access Mode FOUR BANK PAGE BURST FOUR BANK PAGE BURST
Access Time-Max 0.35 ns 0.35 ns
Additional Feature AUTO/SELF REFRESH AUTO/SELF REFRESH
JESD-30 Code R-PBGA-B84 R-PBGA-B84
Length 12.5 mm 12.5 mm
Memory Density 536870912 bit 536870912 bit
Memory IC Type DDR DRAM DDR DRAM
Memory Width 16 16
Number of Functions 1 1
Number of Ports 1 1
Number of Terminals 84 84
Number of Words 33554432 words 33554432 words
Number of Words Code 32000000 32000000
Operating Mode SYNCHRONOUS SYNCHRONOUS
Operating Temperature-Max 95 °C 105 °C
Operating Temperature-Min -40 °C
Organization 32MX16 32MX16
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code TFBGA TFBGA
Package Shape RECTANGULAR RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Cel) NOT SPECIFIED NOT SPECIFIED
Seated Height-Max 1.2 mm 1.2 mm
Self Refresh YES YES
Supply Voltage-Max (Vsup) 1.9 V 1.9 V
Supply Voltage-Min (Vsup) 1.7 V 1.7 V
Supply Voltage-Nom (Vsup) 1.8 V 1.8 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade OTHER INDUSTRIAL
Terminal Form BALL BALL
Terminal Pitch 0.8 mm 0.8 mm
Terminal Position BOTTOM BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Width 8 mm 8 mm
Base Number Matches 1 1

Compare M14D5121632A-1.5BG2M with alternatives

Compare M14D5121632A-1.5BIAG2A with alternatives