M13S64164A-4BVAG2Y
vs
M13S64164A-5TVAG2Y
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Active
Active
Ihs Manufacturer
ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC
ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC
Package Description
TFBGA,
TSOP2,
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8542.32.00.02
8542.32.00.02
Access Mode
FOUR BANK PAGE BURST
FOUR BANK PAGE BURST
Access Time-Max
0.7 ns
0.7 ns
Additional Feature
AUTO REFRESH
AUTO REFRESH
JESD-30 Code
R-PBGA-B60
R-PDSO-G66
Length
13 mm
22.22 mm
Memory Density
67108864 bit
67108864 bit
Memory IC Type
DDR1 DRAM
DDR1 DRAM
Memory Width
16
16
Number of Functions
1
1
Number of Ports
1
1
Number of Terminals
60
66
Number of Words
4194304 words
4194304 words
Number of Words Code
4000000
4000000
Operating Mode
SYNCHRONOUS
SYNCHRONOUS
Operating Temperature-Max
105 °C
105 °C
Operating Temperature-Min
-40 °C
-40 °C
Organization
4MX16
4MX16
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Code
TFBGA
TSOP2
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
GRID ARRAY, THIN PROFILE, FINE PITCH
SMALL OUTLINE, THIN PROFILE
Seated Height-Max
1.2 mm
1.2 mm
Supply Voltage-Max (Vsup)
2.7 V
2.7 V
Supply Voltage-Min (Vsup)
2.3 V
2.3 V
Supply Voltage-Nom (Vsup)
2.5 V
2.5 V
Surface Mount
YES
YES
Technology
CMOS
CMOS
Temperature Grade
INDUSTRIAL
INDUSTRIAL
Terminal Form
BALL
GULL WING
Terminal Pitch
0.8 mm
0.65 mm
Terminal Position
BOTTOM
DUAL
Width
8 mm
10.16 mm
Base Number Matches
1
1
Compare M13S64164A-4BVAG2Y with alternatives
Compare M13S64164A-5TVAG2Y with alternatives