M13S64164A-4BG2Y
vs
M13S64164A-5BG2Y
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Contact Manufacturer
Contact Manufacturer
Ihs Manufacturer
ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC
ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC
Package Description
TFBGA,
TFBGA,
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8542.32.00.02
8542.32.00.02
Access Mode
FOUR BANK PAGE BURST
FOUR BANK PAGE BURST
Access Time-Max
0.7 ns
0.7 ns
Additional Feature
AUTO/SELF REFRESH
AUTO/SELF REFRESH
JESD-30 Code
R-PBGA-B60
R-PBGA-B60
Length
13 mm
13 mm
Memory Density
67108864 bit
67108864 bit
Memory IC Type
DDR DRAM
DDR DRAM
Memory Width
16
16
Number of Functions
1
1
Number of Ports
1
1
Number of Terminals
60
60
Number of Words
4194304 words
4194304 words
Number of Words Code
4000000
4000000
Operating Mode
SYNCHRONOUS
SYNCHRONOUS
Operating Temperature-Max
70 °C
70 °C
Operating Temperature-Min
Organization
4MX16
4MX16
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Code
TFBGA
TFBGA
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
GRID ARRAY, THIN PROFILE, FINE PITCH
GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Cel)
NOT SPECIFIED
NOT SPECIFIED
Seated Height-Max
1.2 mm
1.2 mm
Self Refresh
YES
YES
Supply Voltage-Max (Vsup)
2.7 V
2.7 V
Supply Voltage-Min (Vsup)
2.3 V
2.3 V
Supply Voltage-Nom (Vsup)
2.5 V
2.5 V
Surface Mount
YES
YES
Technology
CMOS
CMOS
Temperature Grade
COMMERCIAL
COMMERCIAL
Terminal Form
BALL
BALL
Terminal Pitch
0.8 mm
0.8 mm
Terminal Position
BOTTOM
BOTTOM
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
NOT SPECIFIED
Width
8 mm
8 mm
Base Number Matches
1
1
Compare M13S64164A-4BG2Y with alternatives
Compare M13S64164A-5BG2Y with alternatives