M13S2561616A-5TVG2A
vs
M13S2561616A-4BG2S
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC
ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC
Package Description
TSOP2,
VFBGA,
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8542.32.00.24
8542.32.00.24
Access Mode
FOUR BANK PAGE BURST
FOUR BANK PAGE BURST
Access Time-Max
0.7 ns
0.7 ns
Additional Feature
AUTO/SELF REFRESH
AUTO/SELF REFRESH
JESD-30 Code
R-PDSO-G66
R-PBGA-B60
Length
22.22 mm
13 mm
Memory Density
268435456 bit
268435456 bit
Memory IC Type
DDR1 DRAM
DDR DRAM
Memory Width
16
16
Number of Functions
1
1
Number of Ports
1
1
Number of Terminals
66
60
Number of Words
16777216 words
16777216 words
Number of Words Code
16000000
16000000
Operating Mode
SYNCHRONOUS
SYNCHRONOUS
Operating Temperature-Max
85 °C
70 °C
Operating Temperature-Min
-40 °C
Organization
16MX16
16MX16
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Code
TSOP2
VFBGA
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE, THIN PROFILE
GRID ARRAY, VERY THIN PROFILE, FINE PITCH
Seated Height-Max
1.2 mm
1 mm
Self Refresh
YES
YES
Supply Voltage-Max (Vsup)
2.7 V
2.7 V
Supply Voltage-Min (Vsup)
2.3 V
2.3 V
Supply Voltage-Nom (Vsup)
2.5 V
2.5 V
Surface Mount
YES
YES
Technology
CMOS
CMOS
Temperature Grade
INDUSTRIAL
COMMERCIAL
Terminal Form
GULL WING
BALL
Terminal Pitch
0.65 mm
0.8 mm
Terminal Position
DUAL
BOTTOM
Width
10.16 mm
8 mm
Base Number Matches
1
1
Compare M13S2561616A-5TVG2A with alternatives
Compare M13S2561616A-4BG2S with alternatives