M12L64164A-7BG2M vs M12L64164A-7BVG2Y feature comparison

M12L64164A-7BG2M Elite Semiconductor Memory Technology Inc

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M12L64164A-7BVG2Y Elite Semiconductor Memory Technology Inc

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Part Life Cycle Code Contact Manufacturer Active
Ihs Manufacturer ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC
Package Description VFBGA, VFBGA,
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.02 8542.32.00.02
Access Mode FOUR BANK PAGE BURST FOUR BANK PAGE BURST
Access Time-Max 6 ns 6 ns
Additional Feature AUTO/SELF REFRESH AUTO/SELF REFRESH
JESD-30 Code S-PBGA-B54 S-PBGA-B54
Length 8 mm 8 mm
Memory Density 67108864 bit 67108864 bit
Memory IC Type SYNCHRONOUS DRAM SYNCHRONOUS DRAM
Memory Width 16 16
Number of Functions 1 1
Number of Ports 1 1
Number of Terminals 54 54
Number of Words 4194304 words 4194304 words
Number of Words Code 4000000 4000000
Operating Mode SYNCHRONOUS SYNCHRONOUS
Operating Temperature-Max 70 °C 85 °C
Operating Temperature-Min -40 °C
Organization 4MX16 4MX16
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code VFBGA VFBGA
Package Shape SQUARE SQUARE
Package Style GRID ARRAY, VERY THIN PROFILE, FINE PITCH GRID ARRAY, VERY THIN PROFILE, FINE PITCH
Seated Height-Max 1 mm 1 mm
Self Refresh YES YES
Supply Voltage-Max (Vsup) 3.6 V 3.6 V
Supply Voltage-Min (Vsup) 3 V 3 V
Supply Voltage-Nom (Vsup) 3.3 V 3.3 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade COMMERCIAL INDUSTRIAL
Terminal Form BALL BALL
Terminal Pitch 0.8 mm 0.8 mm
Terminal Position BOTTOM BOTTOM
Width 8 mm 8 mm
Base Number Matches 1 1

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Compare M12L64164A-7BVG2Y with alternatives