M12L2561616A-6TIG2A vs K4S561632E-TL75T feature comparison

M12L2561616A-6TIG2A Elite Semiconductor Memory Technology Inc

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K4S561632E-TL75T Samsung Semiconductor

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Part Life Cycle Code Contact Manufacturer Obsolete
Ihs Manufacturer ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC SAMSUNG SEMICONDUCTOR INC
Package Description TSOP2, TSOP2, TSOP54,.46,32
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.24 8542.32.00.24
Access Mode FOUR BANK PAGE BURST FOUR BANK PAGE BURST
Access Time-Max 5.4 ns 5.4 ns
Additional Feature AUTO/SELF REFRESH AUTO/SELF REFRESH
JESD-30 Code R-PDSO-G54 R-PDSO-G54
Length 22.22 mm 22.22 mm
Memory Density 268435456 bit 268435456 bit
Memory IC Type SYNCHRONOUS DRAM SYNCHRONOUS DRAM
Memory Width 16 16
Number of Functions 1 1
Number of Ports 1 1
Number of Terminals 54 54
Number of Words 16777216 words 16777216 words
Number of Words Code 16000000 16000000
Operating Mode SYNCHRONOUS SYNCHRONOUS
Operating Temperature-Max 85 °C 70 °C
Operating Temperature-Min -40 °C
Organization 16MX16 16MX16
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code TSOP2 TSOP2
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE
Seated Height-Max 1.2 mm 1.2 mm
Self Refresh YES YES
Supply Voltage-Max (Vsup) 3.6 V 3.6 V
Supply Voltage-Min (Vsup) 3 V 3 V
Supply Voltage-Nom (Vsup) 3.3 V 3.3 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade INDUSTRIAL COMMERCIAL
Terminal Form GULL WING GULL WING
Terminal Pitch 0.8 mm 0.8 mm
Terminal Position DUAL DUAL
Width 10.16 mm 10.16 mm
Base Number Matches 1 1
Pbfree Code No
Rohs Code No
Clock Frequency-Max (fCLK) 133 MHz
I/O Type COMMON
Interleaved Burst Length 1,2,4,8
Moisture Sensitivity Level 1
Output Characteristics 3-STATE
Package Equivalence Code TSOP54,.46,32
Qualification Status Not Qualified
Refresh Cycles 8192
Sequential Burst Length 1,2,4,8,FP
Standby Current-Max 0.002 A
Supply Current-Max 0.18 mA

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Compare K4S561632E-TL75T with alternatives