LVP640P
vs
UF640G-TQ2-T
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
LITE-ON SEMICONDUCTOR CORP
UNISONIC TECHNOLOGIES CO LTD
Part Package Code
TO-220AB
D2PAK
Package Description
FLANGE MOUNT, R-PSFM-T3
SMALL OUTLINE, R-PSSO-G2
Pin Count
3
4
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
Avalanche Energy Rating (Eas)
300 mJ
580 mJ
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
200 V
200 V
Drain Current-Max (ID)
18 A
18 A
Drain-source On Resistance-Max
0.18 Ω
0.18 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-220AB
TO-263AB
JESD-30 Code
R-PSFM-T3
R-PSSO-G2
Number of Elements
1
1
Number of Terminals
3
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
FLANGE MOUNT
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Pulsed Drain Current-Max (IDM)
72 A
72 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
NO
YES
Terminal Form
THROUGH-HOLE
GULL WING
Terminal Position
SINGLE
SINGLE
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
1
Rohs Code
Power Dissipation-Max (Abs)
139 W
Compare LVP640P with alternatives
Compare UF640G-TQ2-T with alternatives